Study on Fabrication and Material Properties of Al Doped ZnO Films Prepared by Atmospheric Atomic Layer Deposition
Main Article Content
Abstract
This paper presents the study on aluminium-doped zinc oxide (AZO) films prepared by atmospheric atomic layer deposition (AALD) using Diethylzinc (DEZ), Zn(C2H5)2, and Trimethylaluminum (TMA), Al(CH3)3 as precursors. The optimal condition for doping was investigated by changing in DEZ/TMA ratio. The crystal structure of fabricated thin films shows the hexagonal wurtzite structure with the orientation along the c-axis. The influence of heat treatment on the grain size, carrier type and concentration of post-fabricated films deposited on the different substrates which are borosilicate glass and sapphire was also analysed. The Hall measurement to determine the carrier type and resistivity at room temperature to 400°C was performed. The measurement results show that as-deposited samples behave as alloy-like property with p-type carriers and high resistivity. However, they turned into n-type nature as expected with the increase in carrier concentration and consequently the marked decrease in electrical resistance when annealed at the higher temperatures that are at 500°C and 900°C (i.e., 773 K and 1173 K). In general, the obtained films with optimized experimental conditions of as- and post-fabrication can be used for thermoelectric applications.
Keywords
AALD, Hall measurement, electrical resistivity, thermoelectric thin films
Article Details
References
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[6] Joana Loureiro, Nuno Neves, Raquel Barros, Tiago Mateus, Rafael Santos, Sergej Filonovich, Sebastian Reparaz, Clivia M. Sotomayor-Torres, Frederic Wyczisk, Laurent Divay, Rodrigo Martins and Isabel Ferreira, Transparent aluminum zinc oxide thin films with enhanced thermoelectric properties, J. of Mater. Chem. A, The Royal Society of Chemistry, iss.2, pp. 6649-6655, 2014 https://doi.org/10.1039/C3TA15052F.
[7] Michał A. Borysiewicz, ZnO as a functional material, a review, Crystals, 9(10), p. 505, 2019 https://doi.org/10.3390/cryst9100505.
[8] David Munoz-Rojas and Judith MacManus-Driscoll, Spatial atmospheric atomic layer deposition: a new laboratory and industrial tool for low-cost photovoltaics, Mater. Horiz., The Royal Society of Chemistry, Vol.1, pp. 314-320, 2014 https://doi.org/10.1039/C3MH00136A.
[9] Robert L. Z. Hoye, David Muñoz-Rojas, Shelby F. Nelson, Andrea Illiberi, Paul Poodt, Fred Roozeboom, and Judith L. MacManus-Driscoll, Research update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices, APL Materials 3, p. 040701, 2015 https://doi.org/10.1063/1.4916525.
[10] D. Muñoz-Rojas, M. Jordan, C. Yeoh, A. T. Marin, A. Kursumovic, L. A. Dunlop, D. C. Iza, A. Chen, H. Wang, and J. L. MacManus-Driscoll, Growth of ∼5 cm2V−1s−1 mobility, p-type copper(I) oxide (Cu2O) films by fast atmospheric atomic layer deposition (AALD) at 225°C and below, AIP Advances 2, pp. 042179, 2012 https://doi.org/10.1063/1.4771681.
[11] Hou, Q., Meng, F. & Sun, J. Electrical and optical properties of Al-doped ZnO and ZnAl2O4 films prepared by atomic layer deposition, Nanoscale Res Lett, Vol. 8, pp. 144, 2013 https://doi.org/10.1186/1556-276X-8-144.
[12] S. J. Jokela and M. D. McCluskey, Structure and stability of O-H donors in ZnO from high-pressure and infrared spectroscopy, Phys. Rev. B, 72, pp.113201, 2005 https://doi.org/10.1103/PhysRevLett.72.113201.