Core/Shell Structure and Photoluminescence of Silicon Nanowires
Main Article Content
Abstract
Silicon nanowires (SiNWs) were synthesized on Si (111) surfaces using the vapor–liquid–solid technique at high temperature ranging from 1100 ºC to 1200 ºC. Si:C mixture powders were used as the material sources. Scanning electron microscope images were revealed that the Si nanowires had few tens nanometer of diameter. The Si-core/SiOx-shell structure of the nanowires was investigated via transmission electron microscopy. The photoluminescence of the nanowires at room temperature demonstrated a quantum confinement effect because of the reduced diameter of the nanowires.
Keywords
SiNWs, thermal evaporation method, core/shell structure
Article Details
References
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[6] T. Zhou, J. Q. Hu, C. P. Li, D. D. Ma, C. S. Lee, and S. T. Lee, “Silicon nanowires as chemical sensors,” Chem. Phys. Lett., vol. 369, no. 1–2, pp. 220–224, Feb. 2003.
[7] Fei Zhao, Dan Zhao, Shao-long Wu, Guo-an Wang and Rui-ting Zheng, “Fabrication and Electron Field Emission of Silicon Nanowires Synthesized by Chemical Etching,” J. Korean Phys. Soc., vol. 55, no. 6, p. 2681, Dec. 2009.
[8] H. Fang, Y. Wu, J. Zhang, and J. Zhu, “Silver catalysis effect in growth of silicon nanowire arrays,” Nanotechnology, vol. 17, no. 15, pp. 3768–3774, 2006.
[9] E. Zhang, Y. Yang, Y. Zhang, and C. Guo, “Synthesis and photoluminescence property of silicon carbon nanowires prepared by the thermal evaporation method,” Phys. E Low-dimensional Syst. Nanostructures, vol. 41, no. 4, pp. 655–659, Feb. 2009.
[10] G. Gundiah, F. L. Deepak, a. Govindaraj, and C. N. R. Rao, “Carbon-assisted synthesis of silicon nanowires,” Chem. Phys. Lett., vol. 381, no. 5–6, pp. 579–583, Nov. 2003.
[11] T. Nguyen, T. T. Nguyen, A. X. Vuong, D. L. Mai, T. H. Nguyen, C. D. Nguyen, and L. H. Nguyen, “Growth of silicon nanowires by sputtering and evaporation methods,” Phys. Status Solidi Appl. Mater. Sci., vol. 210, no. 7, pp. 1429–1432, 2013.
[12] Z. W. Pan, Z. R. Dai, L. Xu, S. T. Lee, and Z. L. Wang, “Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders,” J. Phys. Chem. B, vol. 105, no. 13, pp. 2507–2514, 2001.
[13] M. Lajevardi, H. Eshghi, M. E. Ghazi, M. Izadifard, and a. Goodarzi, “Structural and optical properties of silicon nanowires synthesized by Ag-assisted chemical etching,” Mater. Sci. Semicond. Process., vol. 40, pp. 556–563, 2015.
[14] A. Kramer, T. Boeck, P. Schramm, and R. Fornari, “Investigation of Au and In as solvents for the growth of silicon nanowires on Si(111),” Phys. E Low-dimensional Syst. Nanostructures, vol. 40, no. 7, pp. 2462–2467, May 2008.
[15] R. J. Barstoti, J. E. Fischer, C. H. Lee, J. Mahmood, C. K. W. Adu, and P. C. Eklund, “Imaging, structural, and chemical analysis of silicon nanowires,” Appl. Phys. Lett., vol. 81, no. 15, p. 2866, 2002.
[16] a. D. Yoffe, “Advances in Physics Low-dimensional systems: Quantum size effects and electronic properties of semiconductor microcrystallites – zero-dimensional systems,” Adv. Phys., vol. 51, no. January 2015, pp. 799–890, 2002.
[17] G. Belomoin, J. Therrien, a. Smith, S. Rao, R. Twesten, S. Chiappetti, M. H. Nayfeh, L. Wagner, and L. Mitas, “Observation of a magic discrete family of ultrasmall Si nanoparticles,” Appl. Phys. Lett., vol. 80, no. 5, pp. 841–843, 2002.
[18] J. A. Rodriguez and M. Aceves-Mijares, “Emission Mechanisms of Si Nanocrystals and Defects in SiO 2 Materials,” J. Nanoamor., vol. 04, pp. 1–7, 2014.
[19] H. Scheel, S. Reich, and C. Thomsen, “Electronic band structure of high-index silicon nanowires,” Phys. status solidi, vol. 242, no. 12, pp. 2474–2479, Oct. 2005.
[20] G. Ledoux, J. Gong, F. Huisken, O. Guillois and C. Reynaud, “Photoluminescence of size-separated silicon nanocrystals: confirmation of quantum confinement,” Appl. Phys. Lett., vol. 80, pp. 4834–4836, 2002.