Spectral Properties and Beam Quality of Long Cavity High Power Semiconductor Tapered Lasers Emitting at Red Region using Reflecting Bragg Grating
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Abstract
The wavelength of 4 mm cavity length high-power Semiconductor Tapered lasers are stabilized by Reflecting Bragg Grating. Optical output power of laser system reaches 1 W at working temperature of 25ºC. The laser operates at a stable single longitudinal mode with emitting wavelength of 670.95 nm. Up to optical output power of 0.5 W, the laser beam quality defined by beam propagation ratio M² at 1/e² intensity profile level remains nearly diffraction-limited value of the perfect Gaussian beam. At higher optical powers, the beam propagation ratio increases remarkably because of the broadening of beam waist diameter.
Keywords
semiconductor Tapered laser, Reflecting Bragg Gratting, wavelength stabilizing
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References
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[5] H. Sun, A Practical Guide to Handling Laser Diode Beams, SpringerBriefs in Physics, Springer, (2015).
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