Forrmation of Si - Ge Alloy Nanocrystals: First-Principles Calculation

Truong Giang Nguyen1,2, , Thanh Cong Le1, Duc Dung Nguyen1, Ngoc Ha Ngo1, Van Quang Tran2
1 Hanoi University of Science and Technology – No. 1, Dai Co Viet, Hai Ba Trung, Hanoi, Vietnam
2 University of Transport and Communications, No. 3 Cau Giay, Lang Thuong, Dong Da, Hanoi, Vietnam

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Abstract

In this report, we employed first-principles calculation within the framework of density functional theory in generalized gradient approximation to analyze the stability of Si1-xGex alloys (x=0.0625, 0.1875; 0.3125; 0.6250 and 0.8125) in face-centered cubic (FCC) crystal-structure. The results show that the substitution of Ge atoms into Si sites is stable with the relevant compositions and the lattice constant of the alloy is gradually increased with the composition x. These are in good agreement with experimental results obtained from analyses of Si-Ge nanocrystals prepared by co-sputtering method.

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References

[1]. S. F. Ren, W. Cheng, P. Y. Yu, Phys. Rev. B, 69, (2004) 235.
[2]. L. S. Lannin, Phys. Rev. Β 16, (1977) 1510.
[3] . F. Yndurain, Phys. Rev. B, 18, (1978) 2876.
[4] . H.H. Burke, I.P. Herman, Phys. Rev. B, 48, (1993) 15016.
[5] . P. Hohenberg and W. Kohn, Phys. Rev. B, 136, (1964) 864.
[6]. J. P. Perdew, J. A. Chevary, S. H. Vosko, K. A. Jackson, M. R. Pederson, D. J. Singh, and C. Fiolhais, Phys. Rev. B, 46, (1992) 6671.
[7]. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett, 77. (1996) 3865.
[8]. V. N. Staroverov, G. E. Scuseria, J. Tao, and J. P. Perdew, Phys. Rev. B, 69, (2004) 075102.
[9]. E. 1. Proynov, E. Ruiz, A. Vela, and D. R. Salahud, Int. J. Quantum Chem, S29, (1995) 61-78.
[10]. B. Hammer, K. W. Jacobsen, and J. K. Norskov, Phys, Rev. Lett, 70, (1993) 3971.
[11]. B. Hammer and M. Scheffler, Phys. Rev. Lett, 74, (1995) 3487.
[12]. D. B. Hamann, Phys. Rev. Lett. 76, (1996) 660; Р. Н. T. Philipsen, G. te Velde, and E.J. Baerends, Chem. Phys. Lett, 226, (1994) 583.
[13]. M. Scheffler, Phys. Rev. Lett, 74, (1995) 3487.
[14]. V. Ozolins and M. Körling, Phys. Rev. B, 48, (1993) 18304.
[15]. P.D. Murnaghan, Proceedings of the National Academy of Sciences of the United States of America, 30, (1944) 244-247.
[16]. N. T. Giang, L. T. Cong, N. D. Dung, T. V. Quang. and N.N.Ha, Journal of Physics and Chemicstry of Solids, 93 (2016) 121-125.
[17]. N. N. Ha, N. T. Giang, T. T. T. Thuy, N. N. Trung, N. D. Dung, S. Saeed, and T. Gregokiewicz, Nanotechnology, 26, (2015) 375701.
[18]. N. N. Ha, N. T. Giang, T. N. Khiem, N. D. Dung, and T. Gregokiewicz, Phys. Status Solidi RRL, 10, (2016) 824-827.
[19]. B. D. Cullity, Elements of X-Ray diffraction, 78-100, Addison Wesley Publishing Company, Massachusetts, 1 edition, 1956.